Electron spin resonance in spin glasses: linewidthsBETON, P. H.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 6, pp 1225-1240, issn 0022-3719Article

Surface states in spin glassesBETON, P. H; MOORE, M. A.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 1, pp L37-L40, issn 0022-3719Article

Solitons in spin glassesBETON, P. H; MOORE, M. A.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 6, pp L145-L151, issn 0022-3719Article

Solitons in spin glassesBETON, P. H; MOORE, M. A.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 6, pp L145-L151, issn 0022-3719Article

Hot-electron transport in GaAs in the presence of a magnetic fieldBETON, P. H; LONG, A. P; KELLY, M. J et al.Applied physics letters. 1987, Vol 51, Num 18, pp 1425-1427, issn 0003-6951Article

Hot-electron transport in In_0.53Ga_0.47AsLONG, A. P; BETON, P. H; KELLY, M. J et al.Journal of applied physics. 1987, Vol 62, Num 5, pp 1842-1849, issn 0021-8979Article

Hot-electron transport in heavily doped GaAsLONG, A. P; BETON, P. H; KELLY, M. J et al.Semiconductor science and technology. 1986, Vol 1, Num 1, pp 63-70, issn 0268-1242Article

Translation, rotation and removal of C₆₀ on si(100): 2 x 1 using anisotropic molecular manipulationMORIARTY, P; MA, Y. R; UPWARD, M. D et al.Surface science. 1998, Vol 407, Num 1-3, pp 27-35, issn 0039-6028Article

Resonant tunnelling quantum dots and wires: some recent problems and progressBETON, P. H; BUHMANN, H; WANG, J et al.Semiconductor science and technology. 1994, Vol 9, Num 11S, pp 1912-1918, issn 0268-1242Conference Paper

Non-local magnetoresistance at the crossover between the classical and quantum transport regimesGEIM, A. K; MAIN, P. C; BETON, P. H et al.Surface science. 1992, Vol 263, Num 1-3, pp 298-302, issn 0039-6028Conference Paper

Temperature dependence of magnetoresistance oscillations in a two-dimensional electron gas subjected to a periodic potentialBETON, P. H; MAIN, P. C; DAVISON, M et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 15, pp 9689-9692, issn 0163-1829, 4 p.Article

Growth induced reordering of fullerene clusters trapped in a two-dimensional supramolecular networkTHEOBALD, J. A; OXTOBY, N. S; CHAMPNESS, N. R et al.Langmuir. 2005, Vol 21, Num 5, pp 2038-2041, issn 0743-7463, 4 p.Article

Investigation and manipulation of C₆₀ on a Si surface using a scanning tunneling microscopeMORIARTY, P; DUNN, A. W; MA, Y.-R et al.Fullerene science and technology. 1997, Vol 5, Num 4, pp 769-780, issn 1064-122XArticle

Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfacesHENINI, M; SANGUINETTI, S; BRUSAFERRI, L et al.Microelectronics journal. 1997, Vol 28, Num 8-10, pp 933-938, issn 0959-8324Conference Paper

A novel approach in fabrication and study of laterally quantum-confined resonant tunnelling diodesJIANNONG WANG; BETON, P. H; MORI, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 192-197, issn 0921-5107Conference Paper

Resonant magnetotunneling via quantum confined statesBETON, P. H; WANG, J; MORI, N et al.Physica. B, Condensed matter. 1995, Vol 211, Num 1-4, pp 423-429, issn 0921-4526Conference Paper

New nonlocal magnetoresistance effect at the crossover betwen the classical and quantum transport regimesGEIM, A. K; MAIN, P. C; BETON, P. H et al.Physical review letters. 1991, Vol 67, Num 21, pp 3014-3017, issn 0031-9007Article

High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHzCOUCH, N. R; SPOONER, H; BETON, P. H et al.IEEE electron device letters. 1989, Vol 10, Num 7, pp 288-290, issn 0741-3106Article

Observation of discrete resistance levels in large area graded gap diodes at low temperaturesJUDD, T; COUCH, N. R; BETON, P. H et al.Applied physics letters. 1986, Vol 49, Num 24, pp 1652-1653, issn 0003-6951Article

Assembly and processing of hydrogen bond induced supramolecular nanostructuresKEELING, D. L; OXTOBY, N. S; WILSON, C et al.Nano letters (Print). 2003, Vol 3, Num 1, pp 9-12, issn 1530-6984, 4 p.Article

C₆₀ adsorption on the Si(110)-(16 x 2) surfaceMA, Y.-R; MORIARTY, P; UPWARD, M. D et al.Surface science. 1998, Vol 397, Num 1-3, pp 421-425, issn 0039-6028Article

Discrete electroluminescence lines in sub-micron P-I-N resonant tunnelling diodesMANSOURI, L; BUHMANN, H; WANG, J et al.Superlattices and microstructures. 1994, Vol 16, Num 2, pp 169-171, issn 0749-6036Article

Role of contacts in mesoscopic devicesMAIN, P. C; GEIM, A. K; CARMONA, H. A et al.Superlattices and microstructures. 1994, Vol 15, Num 1, pp 53-59, issn 0749-6036Article

Photohole-induced resonant tunneling of electrons in selectively etched small area GaAs/AlAs double barrier diodesBUHMANN, H; WANG, J; MANSOURI, L et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 973-976, issn 0038-1101Conference Paper

Effect of Si δ doping and growth temperature on the I(V) characteristics of molecular-beam epitaxially grown GaAs/(AlGa)As resonant tunneling devicesHENINI, M; SAKAI, J. W; BETON, P. H et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 958-961, issn 1071-1023Conference Paper